²Î¿¼ÎÄÏ×

[1] Strite S,Morkoq H.J Vac Sci Technol[J],1992;B10(4):1237-1266
[2] Mordoq H,Strite S,Gao G B,et al J Appl Phys[J],1994;76(3):1363-1399
[3] Johnson W C,Parsons J B and Crew M C,J Phys Chem[J],1932;36:2561-2572
[4] Maruska H P and Tietjen J.J Appl Phya Lett[J],1969;15:327-329
[5] Amano H,Akasaki I,Hiramatsu K,et al.Thin Solid Film[J],1988;163:415-420
[6] Nakamura S.Jpn J Appl Phys[J],1991;30:1705-1709
[7] Amano H,Kito M,Hiramatsu K,et al.Jpn J Appl Phys[J],1989;28:2112-2114
[8] Nakamura S,Mukai,T,Senoh M,et al.Jpn J Appl Phys[J],1992;31:L139-L140
[9] Karpinski J,Porowski S and Miotkowaska S.J Crystal Growth[J],1982;56:77-79
[10] Yamane H,Shimade M,Clarke S J,et al.Chem Mater[J],1997;9:413-418
[11] Amano H,Swakai N,Akasaki I et al.Appl Phys Lett [J],1986;48:353-355
[12] Liu H,Thompson A G,Chern C S,et al.In:Fall meeting of the Electrochemical Society,Miami,FL[C],Oct,9-14,1995:328-334
[13] Lee N E,Powell R C,Kim Y W,et al,J Vac Sci Technol[J],1995;A13:2293-2401
[14] Kim W,Aktas O,Botchkarev A E,et al,J Appl Phys[J],1996;79:7657-7666
[15] Cho S H,Tanaka U,Hata K,et al.Jpn J Appl Phys[J],1996;35:644-647
[16] Lin ME,Sverdlov B and Moroq H.J Appl Phys[J],1993;74:5303-5038
[17] Liu H,Frenkel A C,Kim J G,et al.J Appl Phys[J],1993;74:6124-6127
[18] Mackenzie J D,Abernathy C R and Muhr G T,J Crys Growth[J],1996;164:143-148
[19] Detchprohm T,Hiramatsu K,Amano H,et al.Appl Phys Lett[J],1992;61:2688-2690
[20] Lee H and Harris J S.J Crystal rowth[J],1996;169:689-691
[21] Zhang G Y,Tong Y Z,Qin Z X,et al.In:Proc Chi-na-Japan Workshop on Nitride Semiconductor Materials and Devices[C],12-17March,Shanghai,P.R.Chi-na,2001:3-4
[22] Kapolnek D,Keller S,Vetury R,et al.Appl Phys Lett[J],1997;71:1204-1206
[23] Nam O H,Bremser M D,Zheleva T,et al.Appl Phys Lett[J],1997;71:2638-2640
[24] Nakamura S.In:MRS Fall Meeting at Boston(1997) and Internet Journal of.¢ó/V Nitride Semiconductor Research[C],News(1999):Nichia announced the com-mercialization of LDs.
[25] Nakamura S,Iwasa N,Senoh M,et al,Jpn J Appl Phys[J],2000;39:647-650
[26] Zheleva T S,Nam O H,Bremser M D,et al.Appl Phys Lett[J],1997;71:2472-2474
[27] Linticum K J,Gehrke T,Thomson D B,et al.Appl Phys Less[J].1999;75:197-199
[28] Nakamura S,Mukai T and Senoh M.J Apl Phys[J],1992;71:5543-5545
[29] Khan M A,Kuznia J N,Van Hove J M,et al.Appl Phys Less[J],1991;58:526-527
[30] Khan M A,Van Hove J M,Kuznia J N,et al.Appl Phys Lett[J],1991;58:2408-2410
[31] Amano H,Kito M,Hiramatsu K,et al.Jpn J Appl Phys[J],1989;28:2112-2114
[32] Nakamura S,Mukai T and Senoh M.Jpn J Appl Phys [J],1992;31:192-196
[33] Lyutaya M D and Bartnitskaya T S.Inorg Mater[J],1973;9:1052-1054
[34] Yoshida S,Misawa S,Gonda S,et al.J Appl Phys[J].1982;53:5844-6848
[35] YYoshida N,Misawa T,Sasaki T.et al.Appl Phys Less[J].1991;59:2251-2253
[36] Nakamura S and Mukai T.Jpn J Appl Phys[J].1992;31:156-160
[37] Sitar Z,Paisley M J,Yan B,et al.J Vac Sci Technol[J].1990:B8,316-325
[38] Macmillan M F,Clemen L L,Devaty R P.et al J Appl Phys[J],1996;80:2378-2382
[39] Khan M A,Skogman R A,Van Hove J M,et al.Ap-pl Phys Less[J],1990;56:1257-1259
[40] Gaska R,Yand J W,Osinsky A,et al.Ibid,1998;72:707-709
[41] Khan M A,Kuznia J N,Van Hove J M,et al.Appl Phys Less[J],1991;59:1449-1451
[42] Koukitu A,Takaashi N,Taki T,et al.J Crys Growth[J],1997;170:203-208
[43] Nakamura S,Senoh M,Iwasa N,et al.Appl Phys Lett[J],1995;34:1868-1870
[44] Nakamura S,Senoh M,Iwasa N,et al.Jpn J Appl Phys[J],1995;34:797-799
[45] Nakamura S,Senoh M,Nagahama S,et al.Jpn J Appl Phys[J],1996;35:74-75
[46] Nakamura S,Senoh M,Nagahama S,et al.Appl Phys Less[J],1996;69:3034-3036
[47] Nakamura S,Senoh M,Nagahama S,et al.Appl Phys Less[J],1998;72:2014-2016
[48] Nakamura S,Senoh M,Nagahama S,Appl Phys Lett[J],1997;60:616-618
[49] Pankove J I.Materials Science and Engineering[J],1999;B61:305-309
[50] Liang C C,Zhang J.Chinese Jorunal of Semiconduc-tor[J],1999;20:l89-99
[51] Park S S.In:Inter,Symp.on Blue Laser and Emitting Diodes,Chiba Univ[C],Japan,March 5-7,1996;289-294
[52] Pankove J I,Miller E A and Berkeyheiser J E.RCA Rev[J],1971;32:383-392
[53] Pankove J I,Miller E A and Berkeyheiser J E.J Lu-min[J],1973;6:54-57
[54] Amano H,Hiramatsu K,Kito M,et al,J Crys Growth[J],1988;93:79-82
[55] Amano H,Kito M,Hiramatsu K,et al,Jpn J Appl Phys[J],1989;28:2112-2114
[56] Nakamura S,Mukai Tand Senoh M,Jpn J Appl Phys[J]1991;30:1998-2991
[57] Nakamura S,Mukai Tand Senoh M,Jpn J Appl Phys[J]1994;64:1687-1689
[58] Mukai T,Narimatsu H and Nakamura S.Jpn J Appl Phys[J],1998;37:479-485
[59] Mukai T,Yamada M and Nakamura S.Jpn J Appl Phys,1998;37:1358-1364
[60] Monemar B.Material J Science:materials in electron-ics[J],1999;10:227-254
[61] Lim B W,Chen Q C,Yang J Y,et al.Qppl Phys Lett[J],1996;68:3761-3762
[62] Nakamura S,Senoh M,Nagahama S,et al.Jpn J Appl Phys[J],1996;35:74-75
[63] Nakamura S,Senoh M,Nagahama S,et al.Appl Phys[J],1996;69:3034-3036
[64] Nakamura S,Senoh M,Nagahama S,et al.Appl Phys[J],1998;72:7014-2016
[65] Mukai T,Nagahama S,Iwasa N,et al,Proc In:Chi-na-Japan Workshop on Nitride Semiconductor Materials and Devices[C],12-17 March,Shanghai,P.R.Chi-na,2001:96-99 md f d d Internet u Internet Internet wr s u Internet m Internet o Internet Internet